All MOSFET. SFB120N120B Datasheet

 

SFB120N120B Datasheet and Replacement


   Type Designator: SFB120N120B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: TO-263
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SFB120N120B Datasheet (PDF)

 ..1. Size:7419K  cn scilicon
 sfp120n120b sfb120n120b.pdf pdf_icon

SFB120N120B

SFP120N120B,SFB120N120B N-MOSFET 120V, 7.5m, 120AProduct SummaryFeaturesVDS120V Reliable and RuggedRDS(on) typ. 7.5m Lead Free and Green Devices AvailableID120A(RoHS Compliant)100% DVDS TestedpplicationsA100% Avalanche TestedSwitching application Power Management for Inverter Systems.SFP120N120B SFB120N120BN-Channel MOSFETPackage Mar

 7.1. Size:7153K  cn scilicon
 sfp120n80a sfb120n80a sfp066n80ac3 sfb063n80ac3.pdf pdf_icon

SFB120N120B

SFP120N80A,SFB120N80ASFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)5.5m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100

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History: CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | TK7P65W | SFFX054Z

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