SFB205N200C3 Datasheet and Replacement
Type Designator: SFB205N200C3
Marking Code: 205N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 102 nC
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 213 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
Package: TO-263
SFB205N200C3 substitution
SFB205N200C3 Datasheet (PDF)
sfp210n200c3 sfb205n200c3.pdf

SFP210N200C3,SFB205N200C3 N-MOSFET 200V, 16m, 75AFeatures Product Summary High Speed Power Smooth SwitchingV 200V DS Maximum 175C junction temperatureR 16m DS(on) Enhanced Body diode dv/dt capabilityI 75A D Enhanced Avalanche Ruggedness100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manag
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