All MOSFET. SFD025N30C2 Datasheet

 

SFD025N30C2 Datasheet and Replacement


   Type Designator: SFD025N30C2
   Marking Code: 025N30C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 28.3 nS
   Cossⓘ - Output Capacitance: 696 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-252
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SFD025N30C2 Datasheet (PDF)

 ..1. Size:851K  cn scilicon
 sfd025n30c2.pdf pdf_icon

SFD025N30C2

SFD025N30C2N-MOSFET 30V, 2.1m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on)VDS30V Excellent gate charge x RDS(on) product(FOM)RDS(on)2.1mID (Silicon limited)120AID (Package limited) 90AApplication Motor control and drives 100% DVDS Tested Battery management100% Avalanche Tested DC/DC converter100% Avalanche Tested1

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