All MOSFET. SFD025N30C2 Datasheet

 

SFD025N30C2 Datasheet and Replacement


   Type Designator: SFD025N30C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28.3 nS
   Cossⓘ - Output Capacitance: 696 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-252
 

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SFD025N30C2 Datasheet (PDF)

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SFD025N30C2

SFD025N30C2N-MOSFET 30V, 2.1m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on)VDS30V Excellent gate charge x RDS(on) product(FOM)RDS(on)2.1mID (Silicon limited)120AID (Package limited) 90AApplication Motor control and drives 100% DVDS Tested Battery management100% Avalanche Tested DC/DC converter100% Avalanche Tested1

Datasheet: SFB120N120B , SFB120N80A , SFB130N150AC2 , SFB132N200C3 , SFB1800N650C2 , SFB205N200C3 , SFB347N100C2 , SFB60N100 , IRF9640 , SFD070N60C2 , SFD082N68C2 , SFD085N80C2 , SFD096N60BC2 , SFD347N100C2 , SFG014N100BC3 , SFG019N100C3 , SFG025N150C3 .

History: NTGS3441BT1G | TPA60R330M

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