SFD025N30C2 Datasheet and Replacement
Type Designator: SFD025N30C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28.3 nS
Cossⓘ - Output Capacitance: 696 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO-252
SFD025N30C2 substitution
SFD025N30C2 Datasheet (PDF)
sfd025n30c2.pdf

SFD025N30C2N-MOSFET 30V, 2.1m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on)VDS30V Excellent gate charge x RDS(on) product(FOM)RDS(on)2.1mID (Silicon limited)120AID (Package limited) 90AApplication Motor control and drives 100% DVDS Tested Battery management100% Avalanche Tested DC/DC converter100% Avalanche Tested1
Datasheet: SFB120N120B , SFB120N80A , SFB130N150AC2 , SFB132N200C3 , SFB1800N650C2 , SFB205N200C3 , SFB347N100C2 , SFB60N100 , IRF9640 , SFD070N60C2 , SFD082N68C2 , SFD085N80C2 , SFD096N60BC2 , SFD347N100C2 , SFG014N100BC3 , SFG019N100C3 , SFG025N150C3 .
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