SFD025N30C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFD025N30C2
Marking Code: 025N30C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 115 nC
Rise Time (tr): 28.3 nS
Drain-Source Capacitance (Cd): 696 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm
Package: TO-252
SFD025N30C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFD025N30C2 Datasheet (PDF)
sfd025n30c2.pdf
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SFD025N30C2N-MOSFET 30V, 2.1m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on)VDS30V Excellent gate charge x RDS(on) product(FOM)RDS(on)2.1mID (Silicon limited)120AID (Package limited) 90AApplication Motor control and drives 100% DVDS Tested Battery management100% Avalanche Tested DC/DC converter100% Avalanche Tested1
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