SFD025N30C2 Datasheet. Specs and Replacement

Type Designator: SFD025N30C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.3 nS

Cossⓘ - Output Capacitance: 696 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO-252

SFD025N30C2 substitution

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SFD025N30C2 datasheet

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SFD025N30C2

SFD025N30C2 N-MOSFET 30V, 2.1m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 30V Excellent gate charge x RDS(on) product(FOM) RDS(on) 2.1m ID (Silicon limited) 120A ID (Package limited) 90A Application Motor control and drives 100% DVDS Tested Battery management 100% Avalanche Tested DC/DC converter 100% Avalanche Tested 1... See More ⇒

Detailed specifications: SFB120N120B, SFB120N80A, SFB130N150AC2, SFB132N200C3, SFB1800N650C2, SFB205N200C3, SFB347N100C2, SFB60N100, K2611, SFD070N60C2, SFD082N68C2, SFD085N80C2, SFD096N60BC2, SFD347N100C2, SFG014N100BC3, SFG019N100C3, SFG025N150C3

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