All MOSFET. SFD070N60C2 Datasheet

 

SFD070N60C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFD070N60C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 286 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252

 SFD070N60C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFD070N60C2 Datasheet (PDF)

 ..1. Size:9210K  cn scilicon
 sfd070n60c2.pdf

SFD070N60C2 SFD070N60C2

SFD070N60C2 N-MOSFET 60V, 5.3m, 90AFeatures Product Summary Extremely low on-resistance RDS(on) VDS60V Excellent QgxRDS(on) product(FOM) RDS(on)5.3mID Qualified according to JEDEC criteria 90A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tes

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