All MOSFET. SFD070N60C2 Datasheet

 

SFD070N60C2 Datasheet and Replacement


   Type Designator: SFD070N60C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 286 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252
 

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SFD070N60C2 Datasheet (PDF)

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SFD070N60C2

SFD070N60C2 N-MOSFET 60V, 5.3m, 90AFeatures Product Summary Extremely low on-resistance RDS(on) VDS60V Excellent QgxRDS(on) product(FOM) RDS(on)5.3mID Qualified according to JEDEC criteria 90A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tes

Datasheet: SFB120N80A , SFB130N150AC2 , SFB132N200C3 , SFB1800N650C2 , SFB205N200C3 , SFB347N100C2 , SFB60N100 , SFD025N30C2 , 2SK3918 , SFD082N68C2 , SFD085N80C2 , SFD096N60BC2 , SFD347N100C2 , SFG014N100BC3 , SFG019N100C3 , SFG025N150C3 , SFI085N68C2 .

History: WMN07N80M3 | IRHN7130 | KI5905DC | SST80R1K3S | TPA120R800A | RJJ1011DPD

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