SFD082N68C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFD082N68C2
Marking Code: 082N68C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 345 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: TO-252
SFD082N68C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFD082N68C2 Datasheet (PDF)
sfd082n68c2.pdf
SFD082N68C2N-MOSFET 68V, 7.1m, 85AFeatures Product Summary Extremely low on-resistance RDS(on)VDS68V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.1m Qualified according to JEDEC criteriaID85A100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested Motor control and drive
sfd085n80c2.pdf
SFD085N80C2 N-MOSFET 80V, 7.5m, 85AFeatures Product Summary High Speed Power Smooth SwitchingV 80V DS Enhanced Body Diode dv/dt CapabilityR 7.5m DS(on) Enhanced Avalanche RuggednessI 85A D Low On Resistance Low Gate Charge100% DVDS Tested 100% Avalanche Tested Application Brushed and BLDC Motor drive systems Power switching applic
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