All MOSFET. SFD085N80C2 Datasheet

 

SFD085N80C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFD085N80C2
   Marking Code: 085N80C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 97 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252

 SFD085N80C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFD085N80C2 Datasheet (PDF)

 ..1. Size:922K  cn scilicon
 sfd085n80c2.pdf

SFD085N80C2 SFD085N80C2

SFD085N80C2 N-MOSFET 80V, 7.5m, 85AFeatures Product Summary High Speed Power Smooth SwitchingV 80V DS Enhanced Body Diode dv/dt CapabilityR 7.5m DS(on) Enhanced Avalanche RuggednessI 85A D Low On Resistance Low Gate Charge100% DVDS Tested 100% Avalanche Tested Application Brushed and BLDC Motor drive systems Power switching applic

 9.1. Size:660K  cn scilicon
 sfd082n68c2.pdf

SFD085N80C2 SFD085N80C2

SFD082N68C2N-MOSFET 68V, 7.1m, 85AFeatures Product Summary Extremely low on-resistance RDS(on)VDS68V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.1m Qualified according to JEDEC criteriaID85A100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested Motor control and drive

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