SFD096N60BC2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFD096N60BC2
Marking Code: 096N60BC2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 415 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-252
SFD096N60BC2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFD096N60BC2 Datasheet (PDF)
sfd096n60bc2.pdf
SFD096N60BC2N-MOSFET 60V, 8m, 60AFeatures Product Summary Low on resistanceV 60V DS Low gate chargeR 8m DS(on) typ. Fast switchingI 60A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter
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