SFG019N100C3 Datasheet. Specs and Replacement

Type Designator: SFG019N100C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 280 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 108 nS

Cossⓘ - Output Capacitance: 2800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: TO-247PLUS-4L

SFG019N100C3 substitution

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SFG019N100C3 datasheet

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SFG019N100C3

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SFG019N100C3

SFG014N100BC3 N-MOSFET 100V, 1.1m , 280A Features Product Summary Low on resistance V 100V DS Low gate charge R 1.1m DS(on) typ. Fast switching I 408A D(Silicon Limited) High avalanche current I 280A D(Package Limited) Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems ... See More ⇒

Detailed specifications: SFB60N100, SFD025N30C2, SFD070N60C2, SFD082N68C2, SFD085N80C2, SFD096N60BC2, SFD347N100C2, SFG014N100BC3, IRFP064N, SFG025N150C3, SFI085N68C2, SFP024N80C3, SFP024N80I3, SFP026N100C3, SFP026N30BC3, SFP028N100C3, SFP030N100C3

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