SFI085N68C2 Datasheet and Replacement
Type Designator: SFI085N68C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-262
SFI085N68C2 substitution
SFI085N68C2 Datasheet (PDF)
sfi085n68c2.pdf

SFI085N68C2 N-MOSFET 68V, 7.1m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS68V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.1m Qualified according to JEDEC criteria ID100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFI085N68C2Pa
Datasheet: SFD070N60C2 , SFD082N68C2 , SFD085N80C2 , SFD096N60BC2 , SFD347N100C2 , SFG014N100BC3 , SFG019N100C3 , SFG025N150C3 , BS170 , SFP024N80C3 , SFP024N80I3 , SFP026N100C3 , SFP026N30BC3 , SFP028N100C3 , SFP030N100C3 , SFP032N100C3 , SFP033N85C3 .
History: SSM9926EM
Keywords - SFI085N68C2 MOSFET datasheet
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History: SSM9926EM



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