SFI085N68C2 Datasheet. Specs and Replacement

Type Designator: SFI085N68C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 111 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-262

SFI085N68C2 substitution

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SFI085N68C2 datasheet

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SFI085N68C2

SFI085N68C2 N-MOSFET 68V, 7.1m , 100A Features Product Summary Extremely low on-resistance RDS(on) VDS 68V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 7.1m Qualified according to JEDEC criteria ID 100A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFI085N68C2 Pa... See More ⇒

Detailed specifications: SFD070N60C2, SFD082N68C2, SFD085N80C2, SFD096N60BC2, SFD347N100C2, SFG014N100BC3, SFG019N100C3, SFG025N150C3, IRF730, SFP024N80C3, SFP024N80I3, SFP026N100C3, SFP026N30BC3, SFP028N100C3, SFP030N100C3, SFP032N100C3, SFP033N85C3

Keywords - SFI085N68C2 MOSFET specs

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