SFP120N80A Datasheet and Replacement
Type Designator: SFP120N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32.7 nS
Cossⓘ - Output Capacitance: 1596 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO-220
SFP120N80A substitution
SFP120N80A Datasheet (PDF)
sfp120n80a sfb120n80a sfp066n80ac3 sfb063n80ac3.pdf

SFP120N80A,SFB120N80ASFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)5.5m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100
sfp120n120b sfb120n120b.pdf

SFP120N120B,SFB120N120B N-MOSFET 120V, 7.5m, 120AProduct SummaryFeaturesVDS120V Reliable and RuggedRDS(on) typ. 7.5m Lead Free and Green Devices AvailableID120A(RoHS Compliant)100% DVDS TestedpplicationsA100% Avalanche TestedSwitching application Power Management for Inverter Systems.SFP120N120B SFB120N120BN-Channel MOSFETPackage Mar
sfp12n65.pdf

SFP12N65SFP12N65SFP12N65SFP12N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 12A,650V,RDS(on)(Max0.78)@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin
Datasheet: SFP085N75C2 , SFP085N80DC2 , SFP086N80CC2 , SFP090N120C2 , SFP090N80C2 , SFP098N200C3 , SFP110N200C3 , SFP120N120B , 18N50 , SFP133N150AC2 , SFP135N200C3 , SFP1800N650C2 , SFP210N200C3 , SFP350N100C2 , SFP60N100 , SFQ020N100C3 , SFQ030N100C3 .
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