SFP1800N650C2 Datasheet and Replacement
Type Designator: SFP1800N650C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220
SFP1800N650C2 substitution
SFP1800N650C2 Datasheet (PDF)
sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf

SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m, 60AFeatures Product Summary Low R & FOMDS(on) VDS650VExtremely low switching lossRDS(on) typ. 180mExcellent stability and uniformityID60AEasy to drive100% DVDS TestedApplications100% Avalanche Tested Lighting Hard switching PWM Server power supply ChargerSFW
Datasheet: SFP090N120C2 , SFP090N80C2 , SFP098N200C3 , SFP110N200C3 , SFP120N120B , SFP120N80A , SFP133N150AC2 , SFP135N200C3 , P0903BDG , SFP210N200C3 , SFP350N100C2 , SFP60N100 , SFQ020N100C3 , SFQ030N100C3 , SFQ030N80C2 , SFQ230N100 , SFT016N80C3 .
History: IRFAF50 | NCE25P60K | IPD70R900P7S | HSBB3214 | HSBB4115 | IRLU2905PBF | RAQ045P01
Keywords - SFP1800N650C2 MOSFET datasheet
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History: IRFAF50 | NCE25P60K | IPD70R900P7S | HSBB3214 | HSBB4115 | IRLU2905PBF | RAQ045P01



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