SFP210N200C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP210N200C3
Marking Code: 210N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 102 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 213 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
Package: TO-220
SFP210N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP210N200C3 Datasheet (PDF)
..1. Size:951K cn scilicon
sfp210n200c3 sfb205n200c3.pdf
sfp210n200c3 sfb205n200c3.pdf
SFP210N200C3,SFB205N200C3 N-MOSFET 200V, 16m, 75AFeatures Product Summary High Speed Power Smooth SwitchingV 200V DS Maximum 175C junction temperatureR 16m DS(on) Enhanced Body diode dv/dt capabilityI 75A D Enhanced Avalanche Ruggedness100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manag
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
