SFP60N100 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP60N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-220
SFP60N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP60N100 Datasheet (PDF)
..1. Size:769K cn scilicon
sfp60n100 sfb60n100 sfp350n100c2 sfb347n100c2.pdf
sfp60n100 sfb60n100 sfp350n100c2 sfb347n100c2.pdf
SFP60N100,SFB60N100SFP350N100C2,SFB347N100C2N-MOSFET 100V, 30m, 36AFeatures Product Summary Extremely low on-resistance RDS(on)VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 30m Qualified according to JEDEC criteria ID36AApplications100% DVDS Tested Motor control and drive100% Avalanche Tested Battery management UPS (Uninterrupible
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