SFQ020N100C3 Datasheet. Specs and Replacement

Type Designator: SFQ020N100C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO247PLUS

SFQ020N100C3 substitution

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SFQ020N100C3 datasheet

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SFQ020N100C3

SFQ020N100C3 N-MOSFET 100V, 1.4m , 200A Features Product Summary Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 1.4m Qualified according to JEDEC criteria ID 200A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFQ020N100C3... See More ⇒

Detailed specifications: SFP120N120B, SFP120N80A, SFP133N150AC2, SFP135N200C3, SFP1800N650C2, SFP210N200C3, SFP350N100C2, SFP60N100, RFP50N06, SFQ030N100C3, SFQ030N80C2, SFQ230N100, SFT016N80C3, SFT018N100C3, SFW024N100C3, SFW025N100C3, SFW025N100I3

Keywords - SFQ020N100C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs