All MOSFET. SFQ020N100C3 Datasheet

 

SFQ020N100C3 Datasheet and Replacement


   Type Designator: SFQ020N100C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247PLUS
 

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SFQ020N100C3 Datasheet (PDF)

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SFQ020N100C3

SFQ020N100C3 N-MOSFET 100V, 1.4m, 200AFeatures Product Summary Extremely low on-resistance RDS(on)VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 1.4m Qualified according to JEDEC criteria ID200A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFQ020N100C3

Datasheet: SFP120N120B , SFP120N80A , SFP133N150AC2 , SFP135N200C3 , SFP1800N650C2 , SFP210N200C3 , SFP350N100C2 , SFP60N100 , SKD502T , SFQ030N100C3 , SFQ030N80C2 , SFQ230N100 , SFT016N80C3 , SFT018N100C3 , SFW024N100C3 , SFW025N100C3 , SFW025N100I3 .

History: APTC90SKM60CT1G | IPI120P04P4L-03 | NDP510A | STH6N95K5-2 | 75N05E | WNMD3014 | WMQ080N03LG2

Keywords - SFQ020N100C3 MOSFET datasheet

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