All MOSFET. SFW031N100C3 Datasheet

 

SFW031N100C3 Datasheet and Replacement


   Type Designator: SFW031N100C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 1245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-247
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SFW031N100C3 Datasheet (PDF)

 ..1. Size:780K  cn scilicon
 sfw031n100c3.pdf pdf_icon

SFW031N100C3

SFW031N100C3 N-MOSFET 100V, 2.6m, 265AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.6m DS(on) typ. Fast switchingI 265A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC

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History: FQD4N25TM | 2SK3192

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