All MOSFET. SFW031N100C3 Datasheet

 

SFW031N100C3 Datasheet and Replacement


   Type Designator: SFW031N100C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 1245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-247
 

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SFW031N100C3 Datasheet (PDF)

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SFW031N100C3

SFW031N100C3 N-MOSFET 100V, 2.6m, 265AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.6m DS(on) typ. Fast switchingI 265A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC

Datasheet: SFQ030N80C2 , SFQ230N100 , SFT016N80C3 , SFT018N100C3 , SFW024N100C3 , SFW025N100C3 , SFW025N100I3 , SFW027N100C3 , K2611 , SFW042N100C3 , SFW043N150C3 , SFW072N150C2 , SFW082N165C3 , SFW095N200C3 , SFW097N200C3 , SFW107N200C3 , SFW132N200I3 .

History: FDMS0312AS | ST12N10D | KNF4540A | SPA07N60C2 | KTK920T | SSQ6N60 | WMB014N06HG4

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