SFW031N100C3 Datasheet and Replacement
Type Designator: SFW031N100C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 1245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-247
SFW031N100C3 substitution
SFW031N100C3 Datasheet (PDF)
sfw031n100c3.pdf

SFW031N100C3 N-MOSFET 100V, 2.6m, 265AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.6m DS(on) typ. Fast switchingI 265A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC
Datasheet: SFQ030N80C2 , SFQ230N100 , SFT016N80C3 , SFT018N100C3 , SFW024N100C3 , SFW025N100C3 , SFW025N100I3 , SFW027N100C3 , K2611 , SFW042N100C3 , SFW043N150C3 , SFW072N150C2 , SFW082N165C3 , SFW095N200C3 , SFW097N200C3 , SFW107N200C3 , SFW132N200I3 .
History: WM02P06F | AOC2414 | IPI60R099CPA
Keywords - SFW031N100C3 MOSFET datasheet
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SFW031N100C3 equivalent finder
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History: WM02P06F | AOC2414 | IPI60R099CPA



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