All MOSFET. SFW042N100C3 Datasheet

 

SFW042N100C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFW042N100C3
   Marking Code: 042N100C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-247

 SFW042N100C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFW042N100C3 Datasheet (PDF)

 ..1. Size:1345K  cn scilicon
 sfw042n100c3.pdf

SFW042N100C3 SFW042N100C3

SFW042N100C3 N-MOSFET 100V, 3.4m, 160AFeaturesProduct Summary Enhancement Mode VDS100V Very Low On-Resistance RDS(on)3.4m Fast Switching ID 160A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested DC/DC C

 9.1. Size:6396K  cn scilicon
 sfp046n150c3 sfb043n150c3 sfw043n150c3.pdf

SFW042N100C3 SFW042N100C3

SFP046N150C3,SFB043N150C3,SFW043N150C3 N-MOSFET 150V, 3.9mProduct SummaryFeatures High Speed Power Smooth Switching VDS150V Enhanced Body diode dv/dt capabilityRDS(on) typ. 3.9m Enhanced Avalanche RuggednessIR 206AD (Sillicon Limited)Applications100% DVDS Tested Synchronous Rectification in SMPS Hard Switching and High Speed Circuit100% Avala

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