All MOSFET. SFW082N165C3 Datasheet

 

SFW082N165C3 Datasheet and Replacement


   Type Designator: SFW082N165C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 165 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 1343 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO-247
 

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SFW082N165C3 Datasheet (PDF)

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SFW082N165C3

SFW082N165C3 N-MOSFET 165V, 7.5m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS165V Excellent QgxRDS(on) product(FOM)RDS(on)7.5m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalan

Datasheet: SFW024N100C3 , SFW025N100C3 , SFW025N100I3 , SFW027N100C3 , SFW031N100C3 , SFW042N100C3 , SFW043N150C3 , SFW072N150C2 , IRF730 , SFW095N200C3 , SFW097N200C3 , SFW107N200C3 , SFW132N200I3 , SFW1800N650C2 , SFW280N600BC4 , SFW280N600C4 , SLC500MM10SCT2 .

History: FQA9N90C_F109

Keywords - SFW082N165C3 MOSFET datasheet

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