All MOSFET. SFW082N165C3 Datasheet

 

SFW082N165C3 Datasheet and Replacement


   Type Designator: SFW082N165C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 165 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 128 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 1343 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO-247
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SFW082N165C3 Datasheet (PDF)

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SFW082N165C3

SFW082N165C3 N-MOSFET 165V, 7.5m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS165V Excellent QgxRDS(on) product(FOM)RDS(on)7.5m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalan

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGK320N20S | 9N70 | SVF18N65PN | IXFA16N50P | 17P10L-TA3-T | IRF6619 | 2N65KL-TN3-R

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