SFW082N165C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFW082N165C3
Marking Code: 082N165C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 165 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 128 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 63 nC
trⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 1343 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: TO-247
SFW082N165C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFW082N165C3 Datasheet (PDF)
sfw082n165c3.pdf
SFW082N165C3 N-MOSFET 165V, 7.5m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS165V Excellent QgxRDS(on) product(FOM)RDS(on)7.5m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalan
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