SFW107N200C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFW107N200C3
Marking Code: 107N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 132 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 425 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO-247
SFW107N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFW107N200C3 Datasheet (PDF)
sfw107n200c3.pdf
SFW107N200C3 N-MOSFET 200V, 8.6m, 132AFeatureProduct Summary High Speed Power Smooth SwitchingVDS200V Enhanced Body diode dv/dt capabilityRDS(on) typ. 8.6m Enhanced Avalanche Ruggedness Lead Free ID132A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit Power Tools
sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf
SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m, 132AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 9.4m DS(on) typ. Fast switchingI 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
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