SFW132N200I3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFW132N200I3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 402 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
Package: TO-247
SFW132N200I3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFW132N200I3 Datasheet (PDF)
..1. Size:1074K cn scilicon
sfw132n200i3.pdf
sfw132n200i3.pdf
SFW132N200I3 N-MOSFET 200V, 10.4m, 95A Features Product Summary N-channel, normal levelV 200V DS Enhanced avalanche ruggednessR 10.4m DS(on) Maximum 175C junction temperatureI 95A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC ConverterSFW132N200I3Package
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