SLC500MM20SHN2 MOSFET Datasheet: N-Ch, 200V, 500A. Full specification with pinout and replacement list

SLC500MM20SHN2 Specs and Replacement

Type Designator: SLC500MM20SHN2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 900 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 500 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 2100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: MODULE

SLC500MM20SHN2 substitution

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SLC500MM20SHN2 datasheet

..1. Size:810K cn scilicon
slc500mm20shn2.pdf pdf_icon

SLC500MM20SHN2 200V N MOSFET 500A Automotive 200 V N-Channel MOSFET, 500A Half-Bridge Power Module. VDSS=200V ID nom=500A RDS(ON) typ=2.5m Features Low Rdson High current density High Ruggedness Halfbridge Easy paralleling App... See More ⇒

6.1. Size:735K cn scilicon
slc500mm10sct2.pdf pdf_icon

SLC500MM10SCT2 100V N MOSFET 500A Automotive 100 V N-Channel MOSFET, 500A Half-Bridge Power Module. VDSS=100V ID nom=500A RDS(ON) typ=1.05m Features Low Rdson High current density High Ruggedness Halfbridge Easy paralleling Ap... See More ⇒

6.2. Size:717K cn scilicon
slc500mm15shn2.pdf pdf_icon

SLC500MM15SHN2 150V N MOSFET 500A Automotive 150 V N-Channel MOSFET, 500A Half-Bridge Power Module. VDSS=150V ID nom=500A RDS(ON) typ=1.2m Features Low Rdson High current density High Ruggedness Halfbridge Easy paralleling App... See More ⇒

Detailed specifications: SFW097N200C3, SFW107N200C3, SFW132N200I3, SFW1800N650C2, SFW280N600BC4, SFW280N600C4, SLC500MM10SCT2, SLC500MM15SHN2, AON7403, SLC700MM10SCN2, 2N70NL, AJCS10N65CT, AJCS160N08I, JCS10N65B, JCS10N65C, JCS10N65F, JCS10N65S