FDU3N40 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDU3N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: TO251 IPAK
FDU3N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDU3N40 Datasheet (PDF)
fdd3n40 fdu3n40.pdf
February 2007TMUniFETFDD3N40 / FDU3N40400V N-Channel MOSFETFeatures Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 3.7 pF)This advanced technology has been especially ta
fdu3n50nztu.pdf
FDU3N50NZTUN-Channel UniFET IIMOSFET500 V, 2.5 A, 2.5 WUniFET II MOSFET is ON Semiconductors high voltagewww.onsemi.comMOSFET family based on advanced planar stripe and DMOStechnology. This advanced MOSFET family has the smallest on-stateresistance among the planar MOSFET, and also provides superiorDswitching performance and higher avalanche energy strength. Inaddition,
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