SLC700MM10SCN2 Specs and Replacement
Type Designator: SLC700MM10SCN2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 796 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 700 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 14800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: MODULE
SLC700MM10SCN2 substitution
- MOSFET ⓘ Cross-Reference Search
SLC700MM10SCN2 datasheet
slc700mm10scn2.pdf
SLC700MM10SCN2 100V N MOSFET 700A Automotive 100 V N-Channel MOSFET, 700A Half-Bridge Power Module. VDSS=100V ID nom=700A RDS(ON) typ=0.6m Features Low Rdson High current density High Ruggedness Halfbridge Easy paralleling App... See More ⇒
Detailed specifications: SFW107N200C3, SFW132N200I3, SFW1800N650C2, SFW280N600BC4, SFW280N600C4, SLC500MM10SCT2, SLC500MM15SHN2, SLC500MM20SHN2, K2611, 2N70NL, AJCS10N65CT, AJCS160N08I, JCS10N65B, JCS10N65C, JCS10N65F, JCS10N65S, JCS10N70B
Keywords - SLC700MM10SCN2 MOSFET specs
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