All MOSFET. AJCS10N65CT Datasheet

 

AJCS10N65CT Datasheet and Replacement


   Type Designator: AJCS10N65CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 109 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220
 

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AJCS10N65CT Datasheet (PDF)

 ..1. Size:536K  jilin sino
 ajcs10n65ct.pdf pdf_icon

AJCS10N65CT

N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching

 9.1. Size:457K  jilin sino
 ajcs160n08i.pdf pdf_icon

AJCS10N65CT

N N-CHANNEL MOSFET AJCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS DC/DC High power DC/DC converters and switch mode power supplies DC motor control

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History: AOT7S65

Keywords - AJCS10N65CT MOSFET datasheet

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