SDT03N04 Datasheet and Replacement
Type Designator: SDT03N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT223
SDT03N04 substitution
SDT03N04 Datasheet (PDF)
sdt03n04.pdf
GreenProductSDT03N04aS mHop Microelectronics C orp.Ver 1.2N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) () TypR ugged and reliable.S urface Mount Package.400V 1.5A 3.5 @ VGS=10VDGGSSSOT - 22 3(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol
Datasheet: SDU03N04 , FDT86106LZ , SDU02N60 , FDT86113LZ , SDU02N25 , FDT86244 , FDT86246 , FDU3N40 , P55NF06 , FDV305N , FDY1002PZ , FDY100PZ , FDY101PZ , FDY102PZ , FDY2000PZ , FDY3000NZ , FDY300NZ .
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