SDT03N04 PDF Specs and Replacement
Type Designator: SDT03N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 4.4 nC
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT223
SDT03N04 substitution
SDT03N04 PDF Specs
sdt03n04.pdf
Green Product SDT03N04 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( ) Typ R ugged and reliable. S urface Mount Package. 400V 1.5A 3.5 @ VGS=10V D G G S S SOT - 22 3 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol... See More ⇒
Detailed specifications: SDU03N04 , FDT86106LZ , SDU02N60 , FDT86113LZ , SDU02N25 , FDT86244 , FDT86246 , FDU3N40 , AON6414A , FDV305N , FDY1002PZ , FDY100PZ , FDY101PZ , FDY102PZ , FDY2000PZ , FDY3000NZ , FDY300NZ .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
