All MOSFET. JCS18N50WE Datasheet

 

JCS18N50WE MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS18N50WE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48.7 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO247

 JCS18N50WE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS18N50WE Datasheet (PDF)

 ..1. Size:1269K  jilin sino
 jcs18n50we jcs18n50abe.pdf

JCS18N50WE JCS18N50WE

N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 5.1. Size:948K  jilin sino
 jcs18n50wh.pdf

JCS18N50WE JCS18N50WE

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS18N50WH ;NSpe MAIN CHARACTERISTICS \ Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 50nC APPLICATIONS (u l High efficiency swi

 6.1. Size:1873K  jilin sino
 jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf

JCS18N50WE JCS18N50WE

N N- CHANNEL MOSFET RJCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC Eoss@Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 8.1. Size:721K  jilin sino
 jcs18n25vc jcs18n25rc jcs18n25cc jcs18n25fc.pdf

JCS18N50WE JCS18N50WE

N-CHANNEL MOSFET JCS18N25C Package MAIN CHARACTERISTICS ID 18A VDSS 250V Rdson-max@Vgs=10V 230m Qg-typ 17.48nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS

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History: TPB80R180M | 2SK1705 | NCE65NF190K | MCH6429 | TPA65R180D

 

 
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