All MOSFET. JCS3N80V Datasheet

 

JCS3N80V Datasheet and Replacement


   Type Designator: JCS3N80V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.62 Ohm
   Package: IPAK
 

 JCS3N80V substitution

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JCS3N80V Datasheet (PDF)

 ..1. Size:2081K  jilin sino
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JCS3N80V

N RN-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

Datasheet: JCS2N95RA , JCS2N95VA , JCS33N25CT , JCS3N80B , JCS3N80C , JCS3N80F , JCS3N80R , JCS3N80S , IRFP250 , JCS40N25ANT , JCS40N25FC , JCS40N25SC , JCS40N25WC , JCS40N25WT , JCS4AN120CA , JCS4AN120FA , JCS4AN120SA .

History: TK35E08N1

Keywords - JCS3N80V MOSFET datasheet

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