JCS3N80V Datasheet. Specs and Replacement

Type Designator: JCS3N80V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.62 Ohm

Package: IPAK

JCS3N80V substitution

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JCS3N80V datasheet

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JCS3N80V

N R N-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

Detailed specifications: JCS2N95RA, JCS2N95VA, JCS33N25CT, JCS3N80B, JCS3N80C, JCS3N80F, JCS3N80R, JCS3N80S, AON7506, JCS40N25ANT, JCS40N25FC, JCS40N25SC, JCS40N25WC, JCS40N25WT, JCS4AN120CA, JCS4AN120FA, JCS4AN120SA

Keywords - JCS3N80V MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs