All MOSFET. JCS3N80V Datasheet

 

JCS3N80V MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS3N80V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.4 nC
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9.62 Ohm
   Package: IPAK

 JCS3N80V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS3N80V Datasheet (PDF)

 ..1. Size:2081K  jilin sino
 jcs3n80v jcs3n80r jcs3n80b jcs3n80s jcs3n80c jcs3n80f jcs3n80v.pdf

JCS3N80V JCS3N80V

N RN-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2003-01M

 

 
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