JCS3N80V Datasheet and Replacement

   Type Designator: JCS3N80V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.4 nC
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9.62 Ohm
   Package: IPAK
      - MOSFET Cross-Reference Search