All MOSFET. FDY2000PZ Datasheet

 

FDY2000PZ Datasheet and Replacement


   Type Designator: FDY2000PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT563F
 

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FDY2000PZ Datasheet (PDF)

 ..1. Size:204K  fairchild semi
 fdy2000pz.pdf pdf_icon

FDY2000PZ

January 2006 FDY2000PZ Dual P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Dual P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Appl

Datasheet: FDT86246 , FDU3N40 , SDT03N04 , FDV305N , FDY1002PZ , FDY100PZ , FDY101PZ , FDY102PZ , IRFP250N , FDY3000NZ , FDY300NZ , FDY301NZ , FDY302NZ , FDY4000CZ , SDT02N02 , FDZ1905PZ , FDZ191P .

History: FDY101PZ | IRF9317TR

Keywords - FDY2000PZ MOSFET datasheet

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