FDY2000PZ Specs and Replacement
Type Designator: FDY2000PZ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT563F
FDY2000PZ substitution
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FDY2000PZ datasheet
fdy2000pz.pdf
January 2006 FDY2000PZ Dual P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Dual P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Appl... See More ⇒
Detailed specifications: FDT86246, FDU3N40, SDT03N04, FDV305N, FDY1002PZ, FDY100PZ, FDY101PZ, FDY102PZ, IRFP250N, FDY3000NZ, FDY300NZ, FDY301NZ, FDY302NZ, FDY4000CZ, SDT02N02, FDZ1905PZ, FDZ191P
Keywords - FDY2000PZ MOSFET specs
FDY2000PZ cross reference
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History: KP7129A | MDC0531EURH
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