All MOSFET. JCS4AN120SA Datasheet

 

JCS4AN120SA MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS4AN120SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 286 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO263

 JCS4AN120SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS4AN120SA Datasheet (PDF)

 ..1. Size:674K  jilin sino
 jcs4an120fa jcs4an120ca jcs4an120sa.pdf

JCS4AN120SA JCS4AN120SA

N N- CHANNEL MOSFET RJCS4AN120A MAIN CHARACTERISTICS Package ID 4A VDSS 1200 V Rdson-max 4.0 @Vgs=10V Qg-typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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