All MOSFET. JCS5AN50R Datasheet

 

JCS5AN50R MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS5AN50R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.2 nC
   trⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 64.48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: DPAK

 JCS5AN50R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS5AN50R Datasheet (PDF)

 ..1. Size:2444K  jilin sino
 jcs5an50v jcs5an50r jcs5an50c jcs5an50f.pdf

JCS5AN50R JCS5AN50R

N RN-CHANNEL MOSFET JCS5AN50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 13.2nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

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