JCS5AN50V MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS5AN50V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 91 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.2 nC
trⓘ - Rise Time: 18.1 nS
Cossⓘ - Output Capacitance: 64.48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: IPAK
JCS5AN50V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS5AN50V Datasheet (PDF)
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N RN-CHANNEL MOSFET JCS5AN50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 13.2nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
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