All MOSFET. JCS60N10I Datasheet

 

JCS60N10I Datasheet and Replacement


   Type Designator: JCS60N10I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 314 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220
 

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JCS60N10I Datasheet (PDF)

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JCS60N10I

N N-CHANNEL MOSFET JCS60N10I MAIN CHARACTERISTICS Package ID 60A VDSS 100V Rdson-max - 16m (@Vgs=10V Qg-typ 51nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app

Datasheet: JCS4N90FA , JCS4N90RA , JCS4N90SA , JCS4N90VA , JCS5AN50C , JCS5AN50F , JCS5AN50R , JCS5AN50V , IRFB31N20D , JCS620CT , JCS620FT , JCS620RT , JCS620VT , JCS640SH , JCS6AN135ABA , JCS6AN135WA , JCS6AN70F .

History: SPW20N60C3 | AP2R803AGMT-HF | MME70R380PRH | IRFP440R | CS12N65FA9R | 25N10L-TF3-T | QS8M51

Keywords - JCS60N10I MOSFET datasheet

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