JCS60N10I Datasheet. Specs and Replacement

Type Designator: JCS60N10I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 314 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

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JCS60N10I datasheet

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JCS60N10I

N N-CHANNEL MOSFET JCS60N10I MAIN CHARACTERISTICS Package ID 60A VDSS 100V Rdson-max - 16m (@Vgs=10V Qg-typ 51nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app... See More ⇒

Detailed specifications: JCS4N90FA, JCS4N90RA, JCS4N90SA, JCS4N90VA, JCS5AN50C, JCS5AN50F, JCS5AN50R, JCS5AN50V, IRF2807, JCS620CT, JCS620FT, JCS620RT, JCS620VT, JCS640SH, JCS6AN135ABA, JCS6AN135WA, JCS6AN70F

Keywords - JCS60N10I MOSFET specs

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