JCS60N10I MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS60N10I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 314 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220
JCS60N10I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS60N10I Datasheet (PDF)
..1. Size:535K jilin sino
jcs60n10i.pdf
jcs60n10i.pdf
N N-CHANNEL MOSFET JCS60N10I MAIN CHARACTERISTICS Package ID 60A VDSS 100V Rdson-max - 16m (@Vgs=10V Qg-typ 51nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app
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