All MOSFET. JCS620VT Datasheet

 

JCS620VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS620VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.39 nC
   trⓘ - Rise Time: 23.5 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: IPAK

 JCS620VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS620VT Datasheet (PDF)

 ..1. Size:2100K  jilin sino
 jcs620vt jcs620rt jcs620ct jcs620ft.pdf

JCS620VT JCS620VT

N N- CHANNEL MOSFET R JCS620T MAIN CHARACTERISTICS Package ID 5A VDSS 200 V Rdson-max 0.8 @Vgs=10V Qg-typ 7.39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

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