JCS6AN70F MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS6AN70F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21.1 nC
trⓘ - Rise Time: 28.4 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO220F
JCS6AN70F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS6AN70F Datasheet (PDF)
jcs6an70v jcs6an70r jcs6an70f.pdf
N RN-CHANNEL MOSFET JCS6AN70E Package MAIN CHARACTERISTICS ID 6A VDSS 700V Rdson-max 1.70 Vgs=10V Qg-Typ 21.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
jcs6an135aba jcs6an135wa.pdf
N RN-CHANNEL MOSFET JCS6AN135A MAIN CHARACTERISTICS Package ID 6 A VDSS 1350 V RdsonVgs=10V 3.5 -MAX Qg-Typ 58.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge power supplies
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