All MOSFET. JCS6AN70F Datasheet

 

JCS6AN70F MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS6AN70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.1 nC
   trⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO220F

 JCS6AN70F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS6AN70F Datasheet (PDF)

 ..1. Size:1142K  jilin sino
 jcs6an70v jcs6an70r jcs6an70f.pdf

JCS6AN70F JCS6AN70F

N RN-CHANNEL MOSFET JCS6AN70E Package MAIN CHARACTERISTICS ID 6A VDSS 700V Rdson-max 1.70 Vgs=10V Qg-Typ 21.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 8.1. Size:1043K  jilin sino
 jcs6an135aba jcs6an135wa.pdf

JCS6AN70F JCS6AN70F

N RN-CHANNEL MOSFET JCS6AN135A MAIN CHARACTERISTICS Package ID 6 A VDSS 1350 V RdsonVgs=10V 3.5 -MAX Qg-Typ 58.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge power supplies

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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