All MOSFET. JCS70N30ABC Datasheet

 

JCS70N30ABC MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS70N30ABC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115.1 nC
   trⓘ - Rise Time: 227.2 nS
   Cossⓘ - Output Capacitance: 963 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO3PB

 JCS70N30ABC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS70N30ABC Datasheet (PDF)

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jcs70n30wc jcs70n30abc.pdf

JCS70N30ABC
JCS70N30ABC

N RN-CHANNEL MOSFET JCS70N30C MAIN CHARACTERISTICS Package ID 70 A VDSS 300 V RdsonVgs=10V 40m -MAX Qg-Typ 115.1 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power supp

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