JCS7N60V Datasheet. Specs and Replacement

Type Designator: JCS7N60V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: IPAK

JCS7N60V substitution

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JCS7N60V datasheet

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JCS7N60V

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JCS7N60V

N R N-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒

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Detailed specifications: JCS6N90FA, JCS6N90GDA, JCS6N90SA, JCS70N30ABC, JCS70N30WC, JCS7N120ABA, JCS7N120WA, JCS7N60R, MMIS60R580P, JCS7N65BE, JCS7N65CE, JCS7N65FE, JCS7N65RE, JCS7N65SE, JCS7N65VE, JCS7N70B, JCS7N70C

Keywords - JCS7N60V MOSFET specs

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