JCS7N65BE Datasheet. Specs and Replacement

Type Designator: JCS7N65BE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.6 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO262

JCS7N65BE substitution

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JCS7N65BE datasheet

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JCS7N65BE

N R N-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max 1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

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JCS7N65BE

N R N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

 7.1. Size:600K  jilin sino
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JCS7N65BE

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JCS7N65BE

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Detailed specifications: JCS6N90GDA, JCS6N90SA, JCS70N30ABC, JCS70N30WC, JCS7N120ABA, JCS7N120WA, JCS7N60R, JCS7N60V, AOD4184A, JCS7N65CE, JCS7N65FE, JCS7N65RE, JCS7N65SE, JCS7N65VE, JCS7N70B, JCS7N70C, JCS7N70F

Keywords - JCS7N65BE MOSFET specs

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