FDY4000CZ Specs and Replacement
Type Designator: FDY4000CZ
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT563F
FDY4000CZ substitution
- MOSFET ⓘ Cross-Reference Search
FDY4000CZ datasheet
fdy4000cz.pdf
November 2009 FDY4000CZ Complementary N & P-Channel PowerTrench MOSFET Features General Description Q1 N-Channel This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Max rDS(on) 0.7 at VGS = 4.5V, ID = 600mA Trench process to optimize the rDS(ON) @ VGS= 2.5V and Max rDS(on) 0.85 at VGS = 2.5V, ID = 500mA specify th... See More ⇒
fdy4000cz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDY100PZ, FDY101PZ, FDY102PZ, FDY2000PZ, FDY3000NZ, FDY300NZ, FDY301NZ, FDY302NZ, STP75NF75, SDT02N02, FDZ1905PZ, FDZ191P, FDZ192NZ, FDZ193P, FDZ197PZ, FDZ371PZ, FDZ372NZ
Keywords - FDY4000CZ MOSFET specs
FDY4000CZ cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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