FDY4000CZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDY4000CZ
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package: SOT563F
FDY4000CZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDY4000CZ
Datasheet (PDF)
..1. Size:230K fairchild semi
fdy4000cz.pdf
November 2009FDY4000CZComplementary N & P-Channel PowerTrenchMOSFET Features General DescriptionQ1: N-Channel This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Max rDS(on) 0.7 at VGS = 4.5V, ID = 600mATrench process to optimize the rDS(ON) @ VGS= 2.5V and Max rDS(on) 0.85 at VGS = 2.5V, ID = 500mAspecify th
..2. Size:345K onsemi
fdy4000cz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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