November 2009FDY4000CZComplementary N & P-Channel PowerTrenchMOSFET Features General DescriptionQ1: N-Channel This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Max rDS(on) 0.7 at VGS = 4.5V, ID = 600mATrench process to optimize the rDS(ON) @ VGS= 2.5V and Max rDS(on) 0.85 at VGS = 2.5V, ID = 500mAspecify th

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur