JCS80N10I Datasheet. Specs and Replacement

Type Designator: JCS80N10I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO220

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JCS80N10I datasheet

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JCS80N10I

N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap... See More ⇒

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JCS80N10I

N R N-CHANNEL MOSFET JCS80N08I MAIN CHARACTERISTICS Package ID 80A VDSS 80V Rdson-max - 9m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap... See More ⇒

Detailed specifications: JCS7N70S, JCS7N70V, JCS7N80FC, JCS7N95ABA, JCS7N95CA, JCS7N95FA, JCS7N95SA, JCS80N08I, IRFB4110, JCS86N25ABT, JCS86N25GCT, JCS86N25WT, JCS90N10I, JCS9AN50CC, JCS9AN50FC, JCS9AN50RC, JCS9AN50VC

Keywords - JCS80N10I MOSFET specs

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