All MOSFET. JCS80N10I Datasheet

 

JCS80N10I Datasheet and Replacement


   Type Designator: JCS80N10I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220
 

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JCS80N10I Datasheet (PDF)

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JCS80N10I

N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap

 8.1. Size:1245K  jilin sino
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JCS80N10I

N RN-CHANNEL MOSFET JCS80N08I MAIN CHARACTERISTICS Package ID 80A VDSS 80V Rdson-max - 9m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap

Datasheet: JCS7N70S , JCS7N70V , JCS7N80FC , JCS7N95ABA , JCS7N95CA , JCS7N95FA , JCS7N95SA , JCS80N08I , IRF640N , JCS86N25ABT , JCS86N25GCT , JCS86N25WT , JCS90N10I , JCS9AN50CC , JCS9AN50FC , JCS9AN50RC , JCS9AN50VC .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - JCS80N10I MOSFET datasheet

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