All MOSFET. JCS86N25GCT Datasheet

 

JCS86N25GCT MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS86N25GCT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 788 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 120.6 nS
   Cossⓘ - Output Capacitance: 734 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO3PLT

 JCS86N25GCT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS86N25GCT Datasheet (PDF)

 ..1. Size:543K  jilin sino
 jcs86n25wt jcs86n25abt jcs86n25gct.pdf

JCS86N25GCT JCS86N25GCT

N RN-CHANNEL MOSFET JCS86N25T MAIN CHARACTERISTICS Package ID 86 A VDSS 250 V RdsonVgs=10V 50m -MAX Qg-Typ 123 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power suppli

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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