SDT02N02 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SDT02N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Qgⓘ - Total Gate Charge: 1.5 nC
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: SOT223

SDT02N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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