All MOSFET. SDT02N02 Datasheet

 

SDT02N02 Datasheet and Replacement


   Type Designator: SDT02N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Qg ⓘ - Total Gate Charge: 1.5 nC
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: SOT223
 

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SDT02N02 Datasheet (PDF)

 ..1. Size:124K  samhop
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SDT02N02

GreenProductSDT02N02aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) () TypR ugged and reliable.S urface Mount Package.200V 2A 2.5 @ VGS=10VD G GSS SOT-223ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Paramet

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History: FRK9160R | FQA13N80F109 | FQP46N15

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