SDT02N02 PDF Specs and Replacement
Type Designator: SDT02N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
Package: SOT223
SDT02N02 substitution
SDT02N02 PDF Specs
sdt02n02.pdf
Green Product SDT02N02 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( ) Typ R ugged and reliable. S urface Mount Package. 200V 2A 2.5 @ VGS=10V D G G S S SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Paramet... See More ⇒
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