SDT02N02 Datasheet. Specs and Replacement

Type Designator: SDT02N02  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm

Package: SOT223

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SDT02N02 datasheet

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SDT02N02

Green Product SDT02N02 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( ) Typ R ugged and reliable. S urface Mount Package. 200V 2A 2.5 @ VGS=10V D G G S S SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Paramet... See More ⇒

Detailed specifications: FDY101PZ, FDY102PZ, FDY2000PZ, FDY3000NZ, FDY300NZ, FDY301NZ, FDY302NZ, FDY4000CZ, IRF9540N, FDZ1905PZ, FDZ191P, FDZ192NZ, FDZ193P, FDZ197PZ, FDZ371PZ, FDZ372NZ, FDZ375P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.