All MOSFET. JCS9AN50VC Datasheet

 

JCS9AN50VC Datasheet and Replacement


   Type Designator: JCS9AN50VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 121 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: IPAK
 

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JCS9AN50VC Datasheet (PDF)

 ..1. Size:2042K  jilin sino
 jcs9an50vc jcs9an50rc jcs9an50cc jcs9an50fc.pdf pdf_icon

JCS9AN50VC

N RN-CHANNEL MOSFET JCS9AN50C MAIN CHARACTERISTICS Package ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEAT

Datasheet: JCS80N10I , JCS86N25ABT , JCS86N25GCT , JCS86N25WT , JCS90N10I , JCS9AN50CC , JCS9AN50FC , JCS9AN50RC , AON6414A , JCS9N95CA , JCS9N95FA , JCS9N95WA , MC08N005C , MC08N005R , MC08N005S , MC10N005 , MC10N006 .

History: IPB60R360CFD7 | WM02P20G | KP980A | IPB70N12S3-11 | 2SK3850D | 2SK1990 | IPB60R210CFD7

Keywords - JCS9AN50VC MOSFET datasheet

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