JCS9AN50VC Datasheet. Specs and Replacement
Type Designator: JCS9AN50VC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 121 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: IPAK
JCS9AN50VC substitution
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JCS9AN50VC datasheet
jcs9an50vc jcs9an50rc jcs9an50cc jcs9an50fc.pdf
N R N-CHANNEL MOSFET JCS9AN50C MAIN CHARACTERISTICS Package ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEAT... See More ⇒
Detailed specifications: JCS80N10I, JCS86N25ABT, JCS86N25GCT, JCS86N25WT, JCS90N10I, JCS9AN50CC, JCS9AN50FC, JCS9AN50RC, IRFB4115, JCS9N95CA, JCS9N95FA, JCS9N95WA, MC08N005C, MC08N005R, MC08N005S, MC10N005, MC10N006
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