All MOSFET. JCS9AN50VC Datasheet

 

JCS9AN50VC MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS9AN50VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.9 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 121 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: IPAK

 JCS9AN50VC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS9AN50VC Datasheet (PDF)

 ..1. Size:2042K  jilin sino
 jcs9an50vc jcs9an50rc jcs9an50cc jcs9an50fc.pdf

JCS9AN50VC JCS9AN50VC

N RN-CHANNEL MOSFET JCS9AN50C MAIN CHARACTERISTICS Package ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEAT

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