MC08N005C MOSFET. Datasheet pdf. Equivalent
Type Designator: MC08N005C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 135 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74.6 nC
Rise Time (tr): 81.4 nS
Drain-Source Capacitance (Cd): 665 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: TO220
MC08N005C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MC08N005C Datasheet (PDF)
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N N-CHANNEL MOSFET MC08N005 MAIN CHARACTERISTICS Package ID 135A VDSS 85V Rdson_max 5.5m Vgs=10V Qg-typ 74.6nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/D
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