MC08N005S MOSFET. Datasheet pdf. Equivalent
Type Designator: MC08N005S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 135 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74.6 nC
trⓘ - Rise Time: 81.4 nS
Cossⓘ - Output Capacitance: 665 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: DPAK
MC08N005S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MC08N005S Datasheet (PDF)
..1. Size:3314K jilin sino
mc08n005c mc08n005s mc08n005r.pdf
mc08n005c mc08n005s mc08n005r.pdf
N N-CHANNEL MOSFET MC08N005 MAIN CHARACTERISTICS Package ID 135A VDSS 85V Rdson_max 5.5m Vgs=10V Qg-typ 74.6nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/D
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
