All MOSFET. MC08N005S Datasheet

 

MC08N005S MOSFET. Datasheet pdf. Equivalent


   Type Designator: MC08N005S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 74.6 nC
   trⓘ - Rise Time: 81.4 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DPAK

 MC08N005S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MC08N005S Datasheet (PDF)

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 mc08n005c mc08n005s mc08n005r.pdf

MC08N005S MC08N005S

N N-CHANNEL MOSFET MC08N005 MAIN CHARACTERISTICS Package ID 135A VDSS 85V Rdson_max 5.5m Vgs=10V Qg-typ 74.6nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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