All MOSFET. MC11N005 Datasheet

 

MC11N005 Datasheet and Replacement


   Type Designator: MC11N005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 114 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 171 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
 

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MC11N005 Datasheet (PDF)

 ..1. Size:1932K  jilin sino
 mc11n005.pdf pdf_icon

MC11N005

N N-CHANNEL MOSFET MC11N005 MAIN CHARACTERISTICS Package ID 171A VDSS 114V Rdson max - 5m (@Vgs=10V Qg-typ 105nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC

 9.1. Size:567K  fuji
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MC11N005

FMC11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: MC08N005C , MC08N005R , MC08N005S , MC10N005 , MC10N006 , MC10N007L , MC10N020 , MC10N020AL , IRF1010E , MG065R060 , MG120R040 , MG120R080 , MP10N50EI , MP10N60EIB , MP10N60EIC , MP10N60EIF , MP10N60EIS .

History: 2SK1384R | 2SK3826 | AP2626GY | TK30J25D | SM8007NSF | IXFR24N100Q3 | AP93T03AGH-HF

Keywords - MC11N005 MOSFET datasheet

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