All MOSFET. MC11N005 Datasheet

 

MC11N005 Datasheet and Replacement


   Type Designator: MC11N005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 114 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 171 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

MC11N005 Datasheet (PDF)

 ..1. Size:1932K  jilin sino
 mc11n005.pdf pdf_icon

MC11N005

N N-CHANNEL MOSFET MC11N005 MAIN CHARACTERISTICS Package ID 171A VDSS 114V Rdson max - 5m (@Vgs=10V Qg-typ 105nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC

 9.1. Size:567K  fuji
 fmc11n60e.pdf pdf_icon

MC11N005

FMC11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPD04N60S5 | DM12N65C | SM6A12NSFP | AP6679GI-HF | FCPF7N60YDTU | NTD4855N-1G

Keywords - MC11N005 MOSFET datasheet

 MC11N005 cross reference
 MC11N005 equivalent finder
 MC11N005 lookup
 MC11N005 substitution
 MC11N005 replacement

 

 
Back to Top

 


 
.