MC11N005 MOSFET. Datasheet pdf. Equivalent
Type Designator: MC11N005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 114 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 171 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 105 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 950 pF
Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm
Package: TO220
MC11N005 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MC11N005 Datasheet (PDF)
mc11n005.pdf
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N N-CHANNEL MOSFET MC11N005 MAIN CHARACTERISTICS Package ID 171A VDSS 114V Rdson max - 5m (@Vgs=10V Qg-typ 105nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC
fmc11n60e.pdf
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FMC11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
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