MC11N005 Datasheet. Specs and Replacement

Type Designator: MC11N005

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 114 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 171 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220

MC11N005 substitution

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MC11N005 datasheet

 ..1. Size:1932K  jilin sino
 mc11n005.pdf pdf_icon

MC11N005

N N-CHANNEL MOSFET MC11N005 MAIN CHARACTERISTICS Package ID 171A VDSS 114V Rdson max - 5m (@Vgs=10V Qg-typ 105nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC ... See More ⇒

 9.1. Size:567K  fuji
 fmc11n60e.pdf pdf_icon

MC11N005

FMC11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: MC08N005C, MC08N005R, MC08N005S, MC10N005, MC10N006, MC10N007L, MC10N020, MC10N020AL, IRF9540N, MG065R060, MG120R040, MG120R080, MP10N50EI, MP10N60EIB, MP10N60EIC, MP10N60EIF, MP10N60EIS

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