All MOSFET. MG065R060 Datasheet

 

MG065R060 Datasheet and Replacement


   Type Designator: MG065R060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO247-4L
 

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MG065R060 Datasheet (PDF)

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MG065R060

N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG065R060 MAIN CHARACTERISTICS Package ID 30A VCE 650V Rdson-typ 65M @Vgs=20V Qg-typ 65nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters

Datasheet: MC08N005R , MC08N005S , MC10N005 , MC10N006 , MC10N007L , MC10N020 , MC10N020AL , MC11N005 , IRF4905 , MG120R040 , MG120R080 , MP10N50EI , MP10N60EIB , MP10N60EIC , MP10N60EIF , MP10N60EIS , MP15N60EIB .

History: AOB10T60P | FQL50N40 | KTS3C3F30L | AP4451GH-HF | IPA60R800CE | 2P308B9 | IRF644NPBF

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