All MOSFET. MG065R060 Datasheet

 

MG065R060 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MG065R060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO247-4L

 MG065R060 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MG065R060 Datasheet (PDF)

 ..1. Size:942K  jilin sino
 mg065r060.pdf

MG065R060 MG065R060

N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG065R060 MAIN CHARACTERISTICS Package ID 30A VCE 650V Rdson-typ 65M @Vgs=20V Qg-typ 65nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF820LPBF

 

 
Back to Top