MG065R060 Datasheet. Specs and Replacement

Type Designator: MG065R060

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO247-4L

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MG065R060 datasheet

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MG065R060

N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG065R060 MAIN CHARACTERISTICS Package ID 30A VCE 650V Rdson-typ 65M @Vgs=20V Qg-typ 65nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters ... See More ⇒

Detailed specifications: MC08N005R, MC08N005S, MC10N005, MC10N006, MC10N007L, MC10N020, MC10N020AL, MC11N005, IRF4905, MG120R040, MG120R080, MP10N50EI, MP10N60EIB, MP10N60EIC, MP10N60EIF, MP10N60EIS, MP15N60EIB

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