All MOSFET. MG120R040 Datasheet

 

MG120R040 Datasheet and Replacement


   Type Designator: MG120R040
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO247
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MG120R040 Datasheet (PDF)

 ..1. Size:908K  jilin sino
 mg120r040.pdf pdf_icon

MG120R040

N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG120R040 MAIN CHARACTERISTICS Package ID 60A VCE 1200V Rdson-typ 45 m @Vgs=18V Qg-typ 128nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters

 7.1. Size:882K  jilin sino
 mg120r080.pdf pdf_icon

MG120R040

N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG120R080 MAIN CHARACTERISTICS Package ID 28A VCE 1200V Rdson-typ 80M @Vgs=18V Qg-typ 85nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AS2341 | 1N65L-AA3-R | 2SK162 | MME70R380PRH | 25N10L-TF3-T | LSB55R066GT | NCEP6012AS

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