MG120R040 Datasheet. Specs and Replacement

Type Designator: MG120R040

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO247

MG120R040 substitution

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MG120R040 datasheet

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 mg120r040.pdf pdf_icon

MG120R040

N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG120R040 MAIN CHARACTERISTICS Package ID 60A VCE 1200V Rdson-typ 45 m @Vgs=18V Qg-typ 128nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters ... See More ⇒

 7.1. Size:882K  jilin sino
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MG120R040

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Detailed specifications: MC08N005S, MC10N005, MC10N006, MC10N007L, MC10N020, MC10N020AL, MC11N005, MG065R060, IRLB4132, MG120R080, MP10N50EI, MP10N60EIB, MP10N60EIC, MP10N60EIF, MP10N60EIS, MP15N60EIB, MP15N60EIC

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.