MG120R040 MOSFET. Datasheet pdf. Equivalent
Type Designator: MG120R040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 128 nC
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO247
MG120R040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MG120R040 Datasheet (PDF)
mg120r040.pdf
N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG120R040 MAIN CHARACTERISTICS Package ID 60A VCE 1200V Rdson-typ 45 m @Vgs=18V Qg-typ 128nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters
mg120r080.pdf
N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG120R080 MAIN CHARACTERISTICS Package ID 28A VCE 1200V Rdson-typ 80M @Vgs=18V Qg-typ 85nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
