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MG120R080 Spec and Replacement


   Type Designator: MG120R080
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 17.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO247

 MG120R080 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MG120R080 Specs

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MG120R080

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MG120R080

N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG120R040 MAIN CHARACTERISTICS Package ID 60A VCE 1200V Rdson-typ 45 m @Vgs=18V Qg-typ 128nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters ... See More ⇒

Detailed specifications: MC10N005 , MC10N006 , MC10N007L , MC10N020 , MC10N020AL , MC11N005 , MG065R060 , MG120R040 , AO3401 , MP10N50EI , MP10N60EIB , MP10N60EIC , MP10N60EIF , MP10N60EIS , MP15N60EIB , MP15N60EIC , MP15N60EIF .

History: JCS8N60C | RJK0390DPA | F4N60

Keywords - MG120R080 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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