MG120R080 MOSFET. Datasheet pdf. Equivalent
Type Designator: MG120R080
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 17.9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO247
MG120R080 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MG120R080 Datasheet (PDF)
mg120r080.pdf
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N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG120R080 MAIN CHARACTERISTICS Package ID 28A VCE 1200V Rdson-typ 80M @Vgs=18V Qg-typ 85nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters
mg120r040.pdf
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N N-CHANNEL Enhancement Silicon Carbide MOSFET RMG120R040 MAIN CHARACTERISTICS Package ID 60A VCE 1200V Rdson-typ 45 m @Vgs=18V Qg-typ 128nC APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters
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