All MOSFET. MP2N60ER Datasheet

 

MP2N60ER MOSFET. Datasheet pdf. Equivalent


   Type Designator: MP2N60ER
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.8 nC
   trⓘ - Rise Time: 21.8 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: DPAK

 MP2N60ER Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MP2N60ER Datasheet (PDF)

 ..1. Size:799K  jilin sino
 mp2n60er.pdf

MP2N60ER MP2N60ER

N RN-CHANNEL MOSFET MP2N60ER Package MAIN CHARACTERISTICS ID 2A VDSS 600V Rdson-max 3.3 Vgs=10V Qg-Typ 9.8nC APPLICATIONS High efficiency switch mode power supplies Variable frequency LED household appliance LED power supp

 8.1. Size:627K  trinnotech
 tmp2n60z tmpf2n60z.pdf

MP2N60ER MP2N60ER

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 8.2. Size:609K  trinnotech
 tmp2n60az tmpf2n60az.pdf

MP2N60ER MP2N60ER

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 9.1. Size:604K  trinnotech
 tmp2n65az tmpf2n65az.pdf

MP2N60ER MP2N60ER

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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