All MOSFET. MP2N60ER Datasheet

 

MP2N60ER Datasheet and Replacement


   Type Designator: MP2N60ER
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.8 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: DPAK
 

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MP2N60ER Datasheet (PDF)

 ..1. Size:799K  jilin sino
 mp2n60er.pdf pdf_icon

MP2N60ER

N RN-CHANNEL MOSFET MP2N60ER Package MAIN CHARACTERISTICS ID 2A VDSS 600V Rdson-max 3.3 Vgs=10V Qg-Typ 9.8nC APPLICATIONS High efficiency switch mode power supplies Variable frequency LED household appliance LED power supp

 8.1. Size:627K  trinnotech
 tmp2n60z tmpf2n60z.pdf pdf_icon

MP2N60ER

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 8.2. Size:609K  trinnotech
 tmp2n60az tmpf2n60az.pdf pdf_icon

MP2N60ER

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 9.1. Size:604K  trinnotech
 tmp2n65az tmpf2n65az.pdf pdf_icon

MP2N60ER

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

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Datasheet: MP10N60EIS , MP15N60EIB , MP15N60EIC , MP15N60EIF , MP15N60EIS , MP18N50EIC , MP18N50EIF , MP20N60EI , IRLZ44N , MP4N150 , MP4N50FR , MP4N60ER , MP7AN65EC , MP7AN65EF , MP7AN65ER , MP7AN65EV , MP88N25C .

History: MXP1018CT | RTR030N05FRA | MME70R380PRH | IRFP440R | CS12N65FA9R | 25N10L-TF3-T | QS8M51

Keywords - MP2N60ER MOSFET datasheet

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