MP2N60ER Datasheet. Specs and Replacement
Type Designator: MP2N60ER
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.8 nS
Cossⓘ - Output Capacitance: 39 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
Package: DPAK
MP2N60ER substitution
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MP2N60ER datasheet
mp2n60er.pdf
N R N-CHANNEL MOSFET MP2N60ER Package MAIN CHARACTERISTICS ID 2A VDSS 600V Rdson-max 3.3 Vgs=10V Qg-Typ 9.8nC APPLICATIONS High efficiency switch mode power supplies Variable frequency LED household appliance LED power supp... See More ⇒
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TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒
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TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒
tmp2n65az tmpf2n65az.pdf
TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒
Detailed specifications: MP10N60EIS, MP15N60EIB, MP15N60EIC, MP15N60EIF, MP15N60EIS, MP18N50EIC, MP18N50EIF, MP20N60EI, AON6380, MP4N150, MP4N50FR, MP4N60ER, MP7AN65EC, MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C
Keywords - MP2N60ER MOSFET specs
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