MP2N60ER Datasheet. Specs and Replacement

Type Designator: MP2N60ER

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.8 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: DPAK

MP2N60ER substitution

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MP2N60ER datasheet

 ..1. Size:799K  jilin sino
mp2n60er.pdf pdf_icon

MP2N60ER

N R N-CHANNEL MOSFET MP2N60ER Package MAIN CHARACTERISTICS ID 2A VDSS 600V Rdson-max 3.3 Vgs=10V Qg-Typ 9.8nC APPLICATIONS High efficiency switch mode power supplies Variable frequency LED household appliance LED power supp... See More ⇒

 8.1. Size:627K  trinnotech
tmp2n60z tmpf2n60z.pdf pdf_icon

MP2N60ER

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒

 8.2. Size:609K  trinnotech
tmp2n60az tmpf2n60az.pdf pdf_icon

MP2N60ER

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒

 9.1. Size:604K  trinnotech
tmp2n65az tmpf2n65az.pdf pdf_icon

MP2N60ER

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒

Detailed specifications: MP10N60EIS, MP15N60EIB, MP15N60EIC, MP15N60EIF, MP15N60EIS, MP18N50EIC, MP18N50EIF, MP20N60EI, AON6380, MP4N150, MP4N50FR, MP4N60ER, MP7AN65EC, MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C

Keywords - MP2N60ER MOSFET specs

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