MP4N150 MOSFET. Datasheet pdf. Equivalent
Type Designator: MP4N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30.87 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 104 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: TO3P
MP4N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP4N150 Datasheet (PDF)
..1. Size:475K jilin sino
mp4n150.pdf
mp4n150.pdf
N N-CHANNEL MOSFET RMP4N150 MAIN CHARACTERISTICS Package ID 4 A VDSS 1500 V Rdson-max 7.5 @Vgs=10V Qg-typ 30.87nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UP
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