MP4N150 Datasheet. Specs and Replacement
Type Designator: MP4N150
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 104 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: TO3P
MP4N150 substitution
- MOSFET ⓘ Cross-Reference Search
MP4N150 datasheet
mp4n150.pdf
N N-CHANNEL MOSFET R MP4N150 MAIN CHARACTERISTICS Package ID 4 A VDSS 1500 V Rdson-max 7.5 @Vgs=10V Qg-typ 30.87nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UP... See More ⇒
Detailed specifications: MP15N60EIB, MP15N60EIC, MP15N60EIF, MP15N60EIS, MP18N50EIC, MP18N50EIF, MP20N60EI, MP2N60ER, IRF530, MP4N50FR, MP4N60ER, MP7AN65EC, MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C, MP9N150
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