All MOSFET. MP4N150 Datasheet

 

MP4N150 Datasheet and Replacement


   Type Designator: MP4N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30.87 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO3P
 

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MP4N150 Datasheet (PDF)

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MP4N150

N N-CHANNEL MOSFET RMP4N150 MAIN CHARACTERISTICS Package ID 4 A VDSS 1500 V Rdson-max 7.5 @Vgs=10V Qg-typ 30.87nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UP

Datasheet: MP15N60EIB , MP15N60EIC , MP15N60EIF , MP15N60EIS , MP18N50EIC , MP18N50EIF , MP20N60EI , MP2N60ER , AO4407 , MP4N50FR , MP4N60ER , MP7AN65EC , MP7AN65EF , MP7AN65ER , MP7AN65EV , MP88N25C , MP9N150 .

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